STN749 medium current, high performance, low voltage pnp transistor n very low collector to emitter saturation voltage n dc current gain, h fe > 100 n 3 a continuous collector current n sot-223 plastic package for surface mounting circuits n available in tape and reel packing applications n power management in portable equipment n voltage regulation in bias supply circuits n switching regulator in battery charger applications n heavy load driver description the device is manufactured in low voltage pnp planar technology by using a "base island" layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. internal schematic diagram march 2003 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) -35 v v ceo collector-emitter voltage (i b = 0) -25 v v ebo emitter-base voltage (i c = 0) -5 v i c collector current -3 a i cm collector peak current (t p < 5 ms) -6 a p tot total dissipation at t amb = 25 o c 1.6 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 2 3 sot-223 ordering code marking STN749 n749 ? 1/6
thermal data r thj-amb thermal resistance junction-ambient max 78 o c/w device mounted on a pcb area of 1 cm 2 . electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = -30 v v cb = -30 v t j = 100 o c -100 -10 na m a i ebo emitter cut-off current (i c = 0) v eb = -4 v -100 na v (br)ceo * collector-emitter breakdown voltage (i b = 0) i c = -10 ma -25 v v (br)cbo collector-base breakdown voltage (i e = 0) i c = -100 m a -35 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = -100 m a -5 v v ce(sat) * collector-emitter saturation voltage i c = -1a i b = -100 ma i c = -3a i b = -300 ma -0.3 -0.6 v v v be(sat) * base-emitter saturation voltage i c = -1 a i b = -100 ma -1.25 v v be(on) base-emitter turn-on voltage i c = -1 a v ce = -2 v -1 v h fe * dc current gain i c = -50 ma v ce = -2 v i c = -1 a v ce = -2 v i c = -2 a v ce = -2 v i c = -6 a v ce = -2v 70 100 75 15 300 * pulsed: pulse duration = 300 m s, duty cycle 1.5 % STN749 2/6
switching times resistive load switching times resistive load collector-emitter saturation voltage base-emitter saturation voltage dc current gain dc current gain STN749 3/6
figure 1: resistive load switching test circuit. 1) fast electronic switch 2) non-inductive resistor STN749 4/6
dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data STN749 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2003 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com STN749 6/6
|
